Heisener Electronics
BOM

PSMN2R3-100SSEJ

100 V|255A (Ta)|341W (Ta)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

APPLICATION SPECIFIC POWER MOSFE

Specifications

Brand
Nexperia
Package
LFPAK88 (SOT1235)
Packaging
—
Weight
—

Total Inventory

0pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how PSMN2R3-100SSEJ from Nexperia fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerNexperia
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C255A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2.2mOhm @ 25A, 10V
Vgs(th) (Max) @ Id4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs160 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds17200 pF @ 50 V
FET Feature-
Power Dissipation (Max)341W (Ta)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageLFPAK88 (SOT1235)
Package / CaseSOT-1235

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