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30V|5.6A|2.3W
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MOSFET 2N-CH 30V 5.6A 8TSSOP
Specifications
- Brand
- NXP
- Package
- 8-TSSOP (0.173", 4.40mm Width)
- Packaging
- —
- Weight
- —
Total Inventory
232pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how PMWD19UN-518 from NXP fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | NXP USA Inc. | |
| Series | TrenchMOS™ | |
| FET Type | 2 N-Channel (Dual) | |
| FET Feature | Logic Level Gate | |
| Drain to Source Voltage (Vdss) | 30V | |
| Current - Continuous Drain (Id) @ 25°C | 5.6A | |
| Rds On (Max) @ Id, Vgs | 23mOhm @ 3.5A, 4.5V | |
| Vgs(th) (Max) @ Id | 700mV @ 1mA | |
| Gate Charge (Qg) (Max) @ Vgs | 28nC @ 5V | |
| Input Capacitance (Ciss) (Max) @ Vds | 1478pF @ 10V | |
| Power - Max | 2.3W | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-TSSOP (0.173", 4.40mm Width) | |
| Supplier Device Package | 8-TSSOP |
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Datasheet & Documents
pmwd19un-518.pdf
PDF Document · 12 pages
