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30V|4.7A (Tc)|280mW (Tj)
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MOSFET N-CH 30V 4.7A SOT-23
Specifications
- Brand
- NXP
- Package
- TO-236AB (SOT23)
- Packaging
- —
- Weight
- —
Total Inventory
172pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how PMV60EN-215 from NXP fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
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Technical Specifications
| Manufacturer | NXP USA Inc. | |
| Series | TrenchMOS™ | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 30V | |
| Current - Continuous Drain (Id) @ 25°C | 4.7A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Rds On (Max) @ Id, Vgs | 55mOhm @ 2A, 10V | |
| Vgs(th) (Max) @ Id | 2V @ 1mA | |
| Gate Charge (Qg) (Max) @ Vgs | 9.4nC @ 10V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 350pF @ 30V | |
| FET Feature | - | |
| Power Dissipation (Max) | 280mW (Tj) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | TO-236AB (SOT23) | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
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