Heisener Electronics
BOM

PMV55ENEAR

60V|3.1A (Ta)|478mW (Ta), 8.36W (Tc)
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MOSFET N-CH 60V TO-236AB

Specifications

Brand
Nexperia
Package
TO-236AB
Packaging
—
Weight
—

Total Inventory

304pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how PMV55ENEAR from Nexperia fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerNexperia USA Inc.
SeriesAutomotive, AEC-Q101
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C3.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs60mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs19nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds646pF @ 30V
FET Feature-
Power Dissipation (Max)478mW (Ta), 8.36W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-236AB
Package / CaseTO-236-3, SC-59, SOT-23-3

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Datasheet & Documents

pmv55enear.pdf

PDF Document · 16 pages

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