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60 V|2.2A (Ta)|710mW (Ta), 8.3W (Tc)
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MOSFET P-CH 60V 2.2A TO236AB
Specifications
- Brand
- Nexperia
- Package
- TO-236AB
- Packaging
- —
- Weight
- —
Total Inventory
45,297pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how PMV100EPAR from Nexperia fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
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Technical Specifications
| Manufacturer | Nexperia | |
| Series | TrenchMOS™ | |
| FET Type | P-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 60 V | |
| Current - Continuous Drain (Id) @ 25°C | 2.2A (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Rds On (Max) @ Id, Vgs | 130mOhm @ 2.2A, 10V | |
| Vgs(th) (Max) @ Id | 3.2V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 616 pF @ 30 V | |
| FET Feature | - | |
| Power Dissipation (Max) | 710mW (Ta), 8.3W (Tc) | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | TO-236AB | |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
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