Heisener Electronics
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PMT29EN-135

30V|6A (Ta)|820mW (Ta), 8.33W (Tc)
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MOSFET N-CH 30V 6A SC-73

Specifications

Brand
NXP
Package
SOT-223
Packaging
—
Weight
—

Total Inventory

360pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how PMT29EN-135 from NXP fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerNXP USA Inc.
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs29mOhm @ 6A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs11nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds492pF @ 15V
FET Feature-
Power Dissipation (Max)820mW (Ta), 8.33W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-223
Package / CaseTO-261-4, TO-261AA

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Datasheet & Documents

pmt29en-135.pdf

PDF Document · 16 pages

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