PMN50XP-165

20V|4.8A (Tc)|2.2W (Tc)

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MOSFET P-CH 20V 4.8A 6TSOP

241pcs

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MOQ: 1 pcs

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Manufacturer	NXP USA Inc.
Series	TrenchMOS™
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	4.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Rds On (Max) @ Id, Vgs	60mOhm @ 2.8A, 4.5V
Vgs(th) (Max) @ Id	950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs	10nC @ 4.5V
Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	1020pF @ 20V
FET Feature	-
Power Dissipation (Max)	2.2W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	6-TSOP
Package / Case	SC-74, SOT-457