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20V|1.8A (Ta)|275mW (Ta), 1.785W (Tc)
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MOSFET N-CH 20V 1.8A SOT323
Specifications
- Brand
- NXP
- Package
- SOT-323-3
- Packaging
- —
- Weight
- —
Total Inventory
498pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how PMF63UN-115 from NXP fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
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- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | NXP USA Inc. | |
| Series | - | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 20V | |
| Current - Continuous Drain (Id) @ 25°C | 1.8A (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V | |
| Rds On (Max) @ Id, Vgs | 74mOhm @ 1.8A, 4.5V | |
| Vgs(th) (Max) @ Id | 1V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 3.3nC @ 4.5V | |
| Vgs (Max) | ±8V | |
| Input Capacitance (Ciss) (Max) @ Vds | 185pF @ 10V | |
| FET Feature | - | |
| Power Dissipation (Max) | 275mW (Ta), 1.785W (Tc) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | SOT-323-3 | |
| Package / Case | SC-70, SOT-323 |
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Datasheet & Documents
pmf63un-115.pdf
PDF Document · 16 pages
