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30V|1A
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DIODE SCHOTTKY 30V 1A DSN1006-2
Specifications
- Brand
- Nexperia
- Package
- 2-XDFN
- Packaging
- —
- Weight
- —
Total Inventory
151pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how PMEG3010ESBYL from Nexperia fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | Nexperia USA Inc. | |
| Series | - | |
| Diode Type | Schottky | |
| Voltage - DC Reverse (Vr) (Max) | 30V | |
| Current - Average Rectified (Io) | 1A | |
| Voltage - Forward (Vf) (Max) @ If | 565mV @ 1A | |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
| Reverse Recovery Time (trr) | 3.2ns | |
| Current - Reverse Leakage @ Vr | 45µA @ 30V | |
| Capacitance @ Vr, F | 32pF @ 10V, 1MHz | |
| Mounting Type | Surface Mount | |
| Package / Case | 2-XDFN | |
| Supplier Device Package | DSN1006-2 | |
| Operating Temperature - Junction | 150°C (Max) |
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Datasheet & Documents
pmeg3010esbz.pdf
PDF Document · 15 pages
