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20V|3.5A|520mW
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MOSFET 2P-CH 20V 3.5A SOT1118
Specifications
- Brand
- NXP
- Package
- 6-UDFN Exposed Pad
- Packaging
- —
- Weight
- —
Total Inventory
209pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how PMDPB65UP-115 from NXP fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | NXP USA Inc. | |
| Series | - | |
| FET Type | 2 P-Channel (Dual) | |
| FET Feature | Logic Level Gate | |
| Drain to Source Voltage (Vdss) | 20V | |
| Current - Continuous Drain (Id) @ 25°C | 3.5A | |
| Rds On (Max) @ Id, Vgs | 70mOhm @ 1A, 4.5V | |
| Vgs(th) (Max) @ Id | 1V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 6nC @ 4.5V | |
| Input Capacitance (Ciss) (Max) @ Vds | 380pF @ 10V | |
| Power - Max | 520mW | |
| Operating Temperature | 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Package / Case | 6-UDFN Exposed Pad | |
| Supplier Device Package | DFN2020-6 |
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Datasheet & Documents
pmdpb65up-115.pdf
PDF Document · 16 pages
