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30V|-|2W
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MOSFET 2N-CH 30V 8SOIC
Specifications
- Brand
- NXP
- Package
- 8-SOIC (0.154", 3.90mm Width)
- Packaging
- —
- Weight
- —
Total Inventory
348pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how PHN210-118 from NXP fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | NXP USA Inc. | |
| Series | TrenchMOS™ | |
| FET Type | 2 N-Channel (Dual) | |
| FET Feature | Logic Level Gate | |
| Drain to Source Voltage (Vdss) | 30V | |
| Current - Continuous Drain (Id) @ 25°C | - | |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 2.2A, 10V | |
| Vgs(th) (Max) @ Id | 2.8V @ 1mA | |
| Gate Charge (Qg) (Max) @ Vgs | 6nC @ 10V | |
| Input Capacitance (Ciss) (Max) @ Vds | 250pF @ 20V | |
| Power - Max | 2W | |
| Operating Temperature | -65°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | |
| Supplier Device Package | 8-SO |
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Datasheet & Documents
phn210-118.pdf
PDF Document · 8 pages
