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50V|500mA|500mW
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TRANS PREBIAS NPN 500MW TO92-3
Specifications
- Brand
- NXP
- Package
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Packaging
- —
- Weight
- —
Total Inventory
111pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how PDTD113ES-126 from NXP fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | NXP USA Inc. | |
| Series | - | |
| Transistor Type | NPN - Pre-Biased | |
| Current - Collector (Ic) (Max) | 500mA | |
| Voltage - Collector Emitter Breakdown (Max) | 50V | |
| Resistor - Base (R1) | 1 kOhms | |
| Resistor - Emitter Base (R2) | 1 kOhms | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 33 @ 50mA, 5V | |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 2.5mA, 50mA | |
| Current - Collector Cutoff (Max) | 500nA | |
| Frequency - Transition | - | |
| Power - Max | 500mW | |
| Mounting Type | Through Hole | |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | |
| Supplier Device Package | TO-92-3 |
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Datasheet & Documents
pdtd113ek-115.pdf
PDF Document · 11 pages
