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13.6V|5A|10W
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TRANS RF N-CH FET POWERSO-10RF
Specifications
- Brand
- STMicroelectronics
- Package
- PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
- Packaging
- —
- Weight
- —
Total Inventory
928pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how PD20010-E from STMicroelectronics fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | STMicroelectronics | |
| Series | - | |
| Transistor Type | LDMOS | |
| Frequency | 2GHz | |
| Gain | 11dB | |
| Voltage - Test | 13.6V | |
| Current Rating (Amps) | 5A | |
| Noise Figure | - | |
| Current - Test | 150mA | |
| Power - Output | 10W | |
| Voltage - Rated | 40V | |
| Package / Case | PowerSO-10RF Exposed Bottom Pad (2 Formed Leads) | |
| Supplier Device Package | PowerSO-10RF (Formed Lead) |
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Datasheet & Documents
pd20010str-e.pdf
PDF Document · 13 pages
