Heisener Electronics
BOM

PBLS2002S-115

50V, 20V|100mA, 3A|1.5W
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

TRANS NPN PREBIAS/PNP 1.5W 8SO

Specifications

Brand
NXP
Package
8-SOIC (0.154", 3.90mm Width)
Packaging
—
Weight
—

Total Inventory

464pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how PBLS2002S-115 from NXP fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerNXP USA Inc.
Series-
Transistor Type1 NPN Pre-Biased, 1 PNP
Current - Collector (Ic) (Max)100mA, 3A
Voltage - Collector Emitter Breakdown (Max)50V, 20V
Resistor - Base (R1)4.7kOhms
Resistor - Emitter Base (R2)4.7kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 10mA, 5V / 150 @ 2A, 2V
Vce Saturation (Max) @ Ib, Ic150mV @ 500µA, 10mA / 355mV @ 300mA, 3A
Current - Collector Cutoff (Max)1µA, 100nA
Frequency - Transition100MHz
Power - Max1.5W
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SO

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Datasheet & Documents

pbls2002s-115.pdf

PDF Document · 17 pages

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