Heisener Electronics
BOM

NXV55UNR

30 V|1.9A (Ta)|340mW (Ta), 2.1W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

NXV55UN/SOT23/TO-236AB

Specifications

Brand
Nexperia
Package
TO-236AB
Packaging
—
Weight
—

Total Inventory

88,374pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how NXV55UNR from Nexperia fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerNexperia
SeriesTrenchMOS™
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C1.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V
Rds On (Max) @ Id, Vgs66mOhm @ 1.9A, 4.5V
Vgs(th) (Max) @ Id900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs8.7 nC @ 4.5 V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds352 pF @ 15 V
FET Feature-
Power Dissipation (Max)340mW (Ta), 2.1W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-236AB
Package / CaseTO-236-3, SC-59, SOT-23-3

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