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NXPSC06650X6Q

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Part Number

NXPSC06650X6Q

Manufacturer

WeEn Semiconductors

Description

DIODE SIL CARBIDE 650V 6A TO220F

Lifecycle

Obsolete

RoHS

No RoHS Information

EDA/CAD Models

NXPSC06650X6Q PCB Footprint and Symbol

Warehouses

USA, Europe, China, Hong Kong SAR

Estimated Delivery

Sep 28 - Oct 3 (Choose Expedited Shipping)

Warranty

Up to 1 year [Limitety]*

1
In Stock:8526 pcs

运送服务：

NXPSC06650X6Q 规格

Capacitance @ Vr, F
190pF @ 1V, 1MHz
Current - Average Rectified (Io)
6A
Current - Reverse Leakage @ Vr
200 µA @ 650 V
Diode Type
SiC (Silicon Carbide) Schottky
Manufacturer
WeEn Semiconductors
Mounting Type
Through Hole
Operating Temperature - Junction
175°C (Max)
Package / Case
TO-220-2 Full Pack, Isolated Tab
Reverse Recovery Time (trr)
0 ns
Series
-
Speed
No Recovery Time > 500mA (Io)
Supplier Device Package
TO-220F
Voltage - DC Reverse (Vr) (Max)
650 V
Voltage - Forward (Vf) (Max) @ If
1.7 V @ 6 A

NXPSC06650X6Q 标签

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