NXPSC04650B6J
650 V|4A
原装正品全球货源快速交付品质认证技术支持批量优惠
DIODE SIL CARBIDE 650V 4A D2PAK
规格参数
- 品牌
- WeEn Semiconductors
- 封装
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- 包装方式
- —
库存总量
9,390个
12小时发货
起订量：1 个
认证与授权
产品视频
了解 WeEn Semiconductors 的 NXPSC04650B6J 如何融入您的设计。我们的元件专家将介绍关键规格、品质认证及典型应用场景。
- 原厂采购，全程可追溯
- 严格的进料品质检验
- 具竞争力的价格 & 全球快速交货
- 专属应用工程技术支持
技术规格
| Manufacturer | WeEn Semiconductors | |
| Series | - | |
| Diode Type | SiC (Silicon Carbide) Schottky | |
| Voltage - DC Reverse (Vr) (Max) | 650 V | |
| Current - Average Rectified (Io) | 4A | |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 4 A | |
| Speed | No Recovery Time > 500mA (Io) | |
| Reverse Recovery Time (trr) | 0 ns | |
| Current - Reverse Leakage @ Vr | 170 µA @ 650 V | |
| Capacitance @ Vr, F | 130pF @ 1V, 1MHz | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | |
| Supplier Device Package | D2PAK | |
| Operating Temperature - Junction | 175°C (Max) |
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