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NVR1P02T1G

20V|1A (Ta)|400mW (Ta)
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MOSFET P-CH 20V 1A SOT-23-3

Specifications

Brand
ON Semiconductor
Package
SOT-23-3
Packaging
—
Weight
—

Total Inventory

431pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how NVR1P02T1G from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerON Semiconductor
Series-
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs180mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs2.5nC @ 5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds165pF @ 5V
FET Feature-
Power Dissipation (Max)400mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-23-3
Package / CaseTO-236-3, SC-59, SOT-23-3

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Datasheet & Documents

ntr1p02t3g.pdf

PDF Document · 5 pages

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