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NVMYS5D3N04CTWG

40V|19A (Ta), 71A (Tc)|3.6W (Ta), 50W (Tc)
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FET NCH 40V 68A

Specifications

Brand
ON Semiconductor
Package
4-LFPAK
Packaging
—
Weight
—

Total Inventory

160pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how NVMYS5D3N04CTWG from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerON Semiconductor
SeriesAutomotive, AEC-Q101
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C19A (Ta), 71A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs5.3mOhm @ 35A, 10V
Vgs(th) (Max) @ Id3.5V @ 40µA
Gate Charge (Qg) (Max) @ Vgs16nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1000pF @ 25V
FET Feature-
Power Dissipation (Max)3.6W (Ta), 50W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package4-LFPAK
Package / CaseSOT-1023, 4-LFPAK

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Datasheet & Documents

nvmys5d3n04ctwg.pdf

PDF Document · 6 pages

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