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NVMJS2D5N06CLTWG

60V|31A (Ta), 164A (Tc)|3.9W (Ta), 113W (Tc)
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FET NCH 60V 155A

Specifications

Brand
ON Semiconductor
Package
8-LFPAK
Packaging
—
Weight
—

Total Inventory

232pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how NVMJS2D5N06CLTWG from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerON Semiconductor
SeriesAutomotive, AEC-Q101
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C31A (Ta), 164A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs2.4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id2V @ 135µA
Gate Charge (Qg) (Max) @ Vgs52nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3600pF @ 25V
FET Feature-
Power Dissipation (Max)3.9W (Ta), 113W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-LFPAK
Package / CaseSOT-1205, 8-LFPAK56

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Datasheet & Documents

nvmjs2d5n06cltwg.pdf

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