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NVMJS1D5N04CLTWG

40V|38A (Ta), 200A (Tc)|3.8W (Ta), 110W (Tc)
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FET NCH 40V 185A

Specifications

Brand
ON Semiconductor
Package
8-LFPAK
Packaging
—
Weight
—

Total Inventory

398pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how NVMJS1D5N04CLTWG from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
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Technical Specifications

ManufacturerON Semiconductor
SeriesAutomotive, AEC-Q101
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C38A (Ta), 200A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs1.4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id2V @ 130µA
Gate Charge (Qg) (Max) @ Vgs70nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds4300pF @ 20V
FET Feature-
Power Dissipation (Max)3.8W (Ta), 110W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-LFPAK
Package / CaseSOT-1205, 8-LFPAK56

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Datasheet & Documents

nvmjs1d5n04cltwg.pdf

PDF Document · 6 pages

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