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NVMFSW6D1N08HT1G

80V|17A (Ta), 89A (Tc)|3.8W (Ta), 104W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

T8 80V 1 PART PROLIFERATI

Specifications

Brand
ON Semiconductor
Package
5-DFN (5x6) (8-SOFL)
Packaging
—
Weight
—

Total Inventory

230pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how NVMFSW6D1N08HT1G from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerON Semiconductor
SeriesAutomotive, AEC-Q101
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)80V
Current - Continuous Drain (Id) @ 25°C17A (Ta), 89A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs5.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id4V @ 120µA
Gate Charge (Qg) (Max) @ Vgs32nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2085pF @ 40V
FET Feature-
Power Dissipation (Max)3.8W (Ta), 104W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package5-DFN (5x6) (8-SOFL)
Package / Case8-PowerTDFN, 5 Leads

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Datasheet & Documents

nvmfsw6d1n08ht1g.pdf

PDF Document · 7 pages

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