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NVMFS6B03NLT1G

100V|-|3.9W (Ta), 198W (Tc)
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MOSFET N-CH 100V 20A 5DFN

Specifications

Brand
ON Semiconductor
Package
5-DFN (5x6) (8-SOFL)
Packaging
—
Weight
—

Total Inventory

438pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how NVMFS6B03NLT1G from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerON Semiconductor
SeriesAutomotive, AEC-Q101
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C-
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs4mOhm @ 20A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs9.4nC @ 10V
Vgs (Max)±16V
Input Capacitance (Ciss) (Max) @ Vds5320pF @ 25V
FET Feature-
Power Dissipation (Max)3.9W (Ta), 198W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package5-DFN (5x6) (8-SOFL)
Package / Case8-PowerTDFN

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Datasheet & Documents

nvmfs6b03nlwft3g.pdf

PDF Document · 6 pages

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