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Send MessageNVMFD5873NLT1G
60V|10A|3.1W
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MOSFET 2N-CH 60V 10A SO8FL
Specifications
- Brand
- ON Semiconductor
- Package
- 8-PowerTDFN
- Packaging
- —
- Weight
- —
Total Inventory
180pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how NVMFD5873NLT1G from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | ON Semiconductor | |
| Series | - | |
| FET Type | 2 N-Channel (Dual) | |
| FET Feature | Logic Level Gate | |
| Drain to Source Voltage (Vdss) | 60V | |
| Current - Continuous Drain (Id) @ 25°C | 10A | |
| Rds On (Max) @ Id, Vgs | 13mOhm @ 15A, 10V | |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 30.5nC @ 10V | |
| Input Capacitance (Ciss) (Max) @ Vds | 1560pF @ 25V | |
| Power - Max | 3.1W | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-PowerTDFN | |
| Supplier Device Package | 8-DFN (5x6) Dual Flag (SO8FL-Dual) |
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Datasheet & Documents
nvmfd5873nlwft1g.pdf
PDF Document · 6 pages










