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60V|11A (Ta), 61A (Tc)|4.1W (Ta), 118W (Tc)
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MOSFET P-CH 60V 61A DPAK
Specifications
- Brand
- ON Semiconductor
- Package
- DPAK
- Packaging
- —
- Weight
- —
Total Inventory
474pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how NVD5117PLT4G from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
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Technical Specifications
| Manufacturer | ON Semiconductor | |
| Series | Automotive, AEC-Q101 | |
| FET Type | P-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 60V | |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta), 61A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Rds On (Max) @ Id, Vgs | 16mOhm @ 29A, 10V | |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 85nC @ 10V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 4.8nF @ 25V | |
| FET Feature | - | |
| Power Dissipation (Max) | 4.1W (Ta), 118W (Tc) | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | DPAK | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Datasheet & Documents
nvd5117plt4g.pdf
PDF Document · 6 pages
