Heisener Electronics
BOM

NVD4809NHT4G

30V|9A (Ta), 58A (Tc)|1.3W (Ta), 52W (Tc)
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MOSFET N-CH 30V 58A DPAK

Specifications

Brand
ON Semiconductor
Package
DPAK-3
Packaging
—
Weight
—

Total Inventory

177pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how NVD4809NHT4G from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C9A (Ta), 58A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 11.5V
Rds On (Max) @ Id, Vgs9mOhm @ 30A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs44nC @ 11.5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2155pF @ 12V
FET Feature-
Power Dissipation (Max)1.3W (Ta), 52W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDPAK-3
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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Datasheet & Documents

nvd4809nht4g.pdf

PDF Document · 8 pages

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