Heisener Electronics
BOM

NTTFS5811NLTWG

40V|17A (Ta), 53A (Tc)|2.7W (Ta), 33W (Tc)
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MOSFET N-CH 40V 53.6A 8DFN

Specifications

Brand
ON Semiconductor
Package
8-WDFN (3.3x3.3)
Packaging
—
Weight
—

Total Inventory

441pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how NTTFS5811NLTWG from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C17A (Ta), 53A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs6.4mOhm @ 20A, 10V
Vgs(th) (Max) @ Id2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs31nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1570pF @ 25V
FET Feature-
Power Dissipation (Max)2.7W (Ta), 33W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-WDFN (3.3x3.3)
Package / Case8-PowerWDFN

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Datasheet & Documents

nttfs5811nltag.pdf

PDF Document · 6 pages

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