Heisener Electronics
BOM

NTP65N02R

25V|7.6A (Ta), 58A (Tc)|1.04W (Ta), 62.5W (Tc)
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MOSFET N-CH 25V 7.6A TO220AB

Specifications

Brand
ON Semiconductor
Package
TO-220AB
Packaging
—
Weight
—

Total Inventory

446pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how NTP65N02R from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25°C7.6A (Ta), 58A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs10.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs9.5nC @ 4.5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1330pF @ 20V
FET Feature-
Power Dissipation (Max)1.04W (Ta), 62.5W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

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Datasheet & Documents

ntb65n02rg.pdf

PDF Document · 8 pages

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