Heisener Electronics
BOM

NTP60N06G

60V|60A (Ta)|2.4W (Ta), 150W (Tj)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET N-CH 60V 60A TO220AB

Specifications

Brand
ON Semiconductor
Package
TO-220AB
Packaging
—
Weight
—

Total Inventory

192pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how NTP60N06G from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
  • Competitive pricing & global fast delivery
  • Dedicated application engineering support

Technical Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25°C60A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs14mOhm @ 30A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs81nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3220pF @ 25V
FET Feature-
Power Dissipation (Max)2.4W (Ta), 150W (Tj)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3

Recommended Products

RN55D2801FRE6

RN55D2801FRE6

RES 2.8K OHM 1/8W 1% AXIAL

ERJ-14YJ432U

ERJ-14YJ432U

RES SMD 4.3K OHM 5% 1/2W 1210

2225J6300820KCT

2225J6300820KCT

CAP CER 82PF 630V C0G/NP0 2225

7203MHCQE

7203MHCQE

SWITCH TOGGLE DPDT 5A 120V

SJT510104

SJT510104

MODULE MOUNTING TRACK, 10 POSITI

1546213-3

1546213-3

TERM BLOCK HDR 3POS VERT 5.08MM

A20220304

A20220304

CONN BARRIER STRIP 3CIRC 0.375"

ESQT-138-02-F-D-800

ESQT-138-02-F-D-800

ELEVATED 2MM SOCKETS

1411169-1

1411169-1

MARKET2X4MAL UNSEAL

PT00C-12-8S-SR

PT00C-12-8S-SR

CONN RCPT 8POS WALL MNT SKT

Datasheet & Documents

ntb60n06g.pdf

PDF Document · 10 pages

Download

Datasheet Preview

Download