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20V|2.3A (Ta)|710mW (Ta)
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MOSFET P-CH 20V 2.3A 8-SOIC
Specifications
- Brand
- ON Semiconductor
- Package
- 8-SOIC
- Packaging
- —
- Weight
- —
Total Inventory
500pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how NTMSD2P102LR2G from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
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Technical Specifications
| Manufacturer | ON Semiconductor | |
| Series | FETKY™ | |
| FET Type | P-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 20V | |
| Current - Continuous Drain (Id) @ 25°C | 2.3A (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V | |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 2.4A, 4.5V | |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 18nC @ 4.5V | |
| Vgs (Max) | ±10V | |
| Input Capacitance (Ciss) (Max) @ Vds | 750pF @ 16V | |
| FET Feature | Schottky Diode (Isolated) | |
| Power Dissipation (Max) | 710mW (Ta) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | 8-SOIC | |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
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Datasheet & Documents
ntmsd2p102lr2g.pdf
PDF Document · 9 pages
