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NTMS4P01R2

12V|3.4A (Ta)|790mW (Ta)
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MOSFET P-CH 12V 3.4A 8-SOIC

Specifications

Brand
ON Semiconductor
Package
8-SOIC
Packaging
—
Weight
—

Total Inventory

186pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how NTMS4P01R2 from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerON Semiconductor
Series-
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)12V
Current - Continuous Drain (Id) @ 25°C3.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Rds On (Max) @ Id, Vgs45mOhm @ 4.5A, 4.5V
Vgs(th) (Max) @ Id1.15V @ 250µA
Gate Charge (Qg) (Max) @ Vgs35nC @ 4.5V
Vgs (Max)±10V
Input Capacitance (Ciss) (Max) @ Vds1850pF @ 9.6V
FET Feature-
Power Dissipation (Max)790mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SOIC
Package / Case8-SOIC (0.154", 3.90mm Width)

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Datasheet & Documents

ntms4p01r2.pdf

PDF Document · 8 pages

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