Heisener Electronics
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NTMKB4895NT1G

30V|15A (Ta), 66A (Tc)|2.2W (Ta), 42W (Tc)
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MOSFET N-CH 30V 15A ICEPAK

Specifications

Brand
ON Semiconductor
Package
4-ICEPAK - B1 PAD (4.8x3.8)
Packaging
—
Weight
—

Total Inventory

196pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how NTMKB4895NT1G from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C15A (Ta), 66A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs6mOhm @ 15A, 10V
Vgs(th) (Max) @ Id2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs25nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1644pF @ 15V
FET Feature-
Power Dissipation (Max)2.2W (Ta), 42W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package4-ICEPAK - B1 PAD (4.8x3.8)
Package / Case4-ICEPAK

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Datasheet & Documents

ntmkb4895nt1g.pdf

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