Heisener Electronics
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NTMFS4H013NFT1G

25V|43A (Ta), 269A (Tc)|2.7W (Ta), 104W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET N-CH 25V 35A SO8FL

Specifications

Brand
ON Semiconductor
Package
5-DFN (5x6) (8-SOFL)
Packaging
—
Weight
—

Total Inventory

254pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how NTMFS4H013NFT1G from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)25V
Current - Continuous Drain (Id) @ 25°C43A (Ta), 269A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs0.9mOhm @ 30A, 10V
Vgs(th) (Max) @ Id2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs56nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds3923pF @ 12V
FET Feature-
Power Dissipation (Max)2.7W (Ta), 104W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package5-DFN (5x6) (8-SOFL)
Package / Case8-PowerTDFN

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Datasheet & Documents

ntmfs4h013nft1g.pdf

PDF Document · 7 pages

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