Heisener Electronics
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NTMFS4C09NT1G

30V|9A (Ta)|760mW (Ta), 25.5W (Tc)
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MOSFET N-CH 30V 9A SO8FL

Specifications

Brand
ON Semiconductor
Package
5-DFN (5x6) (8-SOFL)
Packaging
—
Weight
—

Total Inventory

416pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how NTMFS4C09NT1G from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs5.8mOhm @ 30A, 10V
Vgs(th) (Max) @ Id2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs10.9nC @ 4.5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1252pF @ 15V
FET Feature-
Power Dissipation (Max)760mW (Ta), 25.5W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package5-DFN (5x6) (8-SOFL)
Package / Case8-PowerTDFN

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Datasheet & Documents

ntmfs4c09nt1g-001.pdf

PDF Document · 7 pages

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