Heisener Electronics
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NTMFS4897NFT1G

30V|17A (Ta), 171A (Tc)|950mW (Ta), 96.2W (Tc)
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET N-CH 30V SO-8FL

Specifications

Brand
ON Semiconductor
Package
5-DFN (5x6) (8-SOFL)
Packaging
—
Weight
—

Total Inventory

4,131pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how NTMFS4897NFT1G from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C17A (Ta), 171A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs2mOhm @ 22A, 10V
Vgs(th) (Max) @ Id2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs83.6nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds5660pF @ 15V
FET Feature-
Power Dissipation (Max)950mW (Ta), 96.2W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package5-DFN (5x6) (8-SOFL)
Package / Case8-PowerTDFN, 5 Leads

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Datasheet & Documents

ntmfs4897nft3g.pdf

PDF Document · 7 pages

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