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NTLUS3C18PZTAG

12V|4.4A (Ta)|660mW (Ta)
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MOSFET P-CH 12V 4.4A 6UDFN

Specifications

Brand
ON Semiconductor
Package
6-UDFN (1.6x1.6)
Packaging
—
Weight
—

Total Inventory

457pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how NTLUS3C18PZTAG from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerON Semiconductor
Series-
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)12V
Current - Continuous Drain (Id) @ 25°C4.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Rds On (Max) @ Id, Vgs24mOhm @ 7A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs15.8nC @ 4.5V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds1570pF @ 6V
FET Feature-
Power Dissipation (Max)660mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package6-UDFN (1.6x1.6)
Package / Case6-PowerUFDFN

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Datasheet & Documents

ntlus3c18pztbg.pdf

PDF Document · 6 pages

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