Heisener Electronics
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NTLJS3A18PZTXG

20V|5A (Ta)|700mW (Ta)
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MOSFET P-CH 20V 8.4A WDFN6

Specifications

Brand
ON Semiconductor
Package
6-WDFN (2x2)
Packaging
—
Weight
—

Total Inventory

199pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how NTLJS3A18PZTXG from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

  • Authentic sourcing with full traceability
  • Rigorous incoming quality inspection
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Technical Specifications

ManufacturerON Semiconductor
Series-
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V
Rds On (Max) @ Id, Vgs18mOhm @ 7A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs28nC @ 4.5V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds2240pF @ 15V
FET Feature-
Power Dissipation (Max)700mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package6-WDFN (2x2)
Package / Case6-WDFN Exposed Pad

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Datasheet & Documents

ntljs3a18pztxg.pdf

PDF Document · 6 pages

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