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8V|3.7A (Ta)|700mW (Ta)
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MOSFET P-CH 8V 3.7A 6-WDFN
Specifications
- Brand
- ON Semiconductor
- Package
- 6-WDFN (2x2)
- Packaging
- —
- Weight
- —
Total Inventory
418pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how NTLJS1102PTAG from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
- Rigorous incoming quality inspection
- Competitive pricing & global fast delivery
- Dedicated application engineering support
Technical Specifications
| Manufacturer | ON Semiconductor | |
| Series | - | |
| FET Type | P-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 8V | |
| Current - Continuous Drain (Id) @ 25°C | 3.7A (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 1.2V, 4.5V | |
| Rds On (Max) @ Id, Vgs | 36mOhm @ 6.2A, 4.5V | |
| Vgs(th) (Max) @ Id | 720mV @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 25nC @ 4.5V | |
| Vgs (Max) | ±6V | |
| Input Capacitance (Ciss) (Max) @ Vds | 1585pF @ 4V | |
| FET Feature | - | |
| Power Dissipation (Max) | 700mW (Ta) | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | 6-WDFN (2x2) | |
| Package / Case | 6-WDFN Exposed Pad |
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Datasheet & Documents
ntljs1102ptbg.pdf
PDF Document · 7 pages
