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NTJS4160NT1G

30V|1.8A (Ta)|300mW (Ta)
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MOSFET N-CH 30V 1.8A SC88-6

Specifications

Brand
ON Semiconductor
Package
SC-88/SC70-6/SOT-363
Packaging
—
Weight
—

Total Inventory

185pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how NTJS4160NT1G from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C1.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs60mOhm @ 2.6A, 10V
Vgs(th) (Max) @ Id2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs2.75nC @ 4.5V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds230pF @ 10V
FET Feature-
Power Dissipation (Max)300mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSC-88/SC70-6/SOT-363
Package / Case6-TSSOP, SC-88, SOT-363

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Datasheet & Documents

ntjs4160nt1g.pdf

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