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NTJS3157NT1G

20V|3.2A (Ta)|1W (Ta)
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MOSFET N-CH 20V 3.2A SOT-363

Specifications

Brand
ON Semiconductor
Package
SC-88/SC70-6/SOT-363
Packaging
—
Weight
—

Total Inventory

25,405pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how NTJS3157NT1G from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C3.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Rds On (Max) @ Id, Vgs60mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs15nC @ 4.5V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds500pF @ 10V
FET Feature-
Power Dissipation (Max)1W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSC-88/SC70-6/SOT-363
Package / Case6-TSSOP, SC-88, SOT-363

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Datasheet & Documents

ntjs3157nt4g.pdf

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