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NTJS3151PT1G

12V|2.7A (Ta)|625mW (Ta)
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MOSFET P-CH 12V 2.7A SOT-363

Specifications

Brand
ON Semiconductor
Package
SC-88/SC70-6/SOT-363
Packaging
—
Weight
—

Total Inventory

97,346pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how NTJS3151PT1G from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerON Semiconductor
Series-
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)12V
Current - Continuous Drain (Id) @ 25°C2.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Rds On (Max) @ Id, Vgs60mOhm @ 3.3A, 4.5V
Vgs(th) (Max) @ Id1.2V @ 100µA
Gate Charge (Qg) (Max) @ Vgs8.6nC @ 4.5V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds850pF @ 12V
FET Feature-
Power Dissipation (Max)625mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSC-88/SC70-6/SOT-363
Package / Case6-TSSOP, SC-88, SOT-363

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Datasheet & Documents

ntjs3151pt2.pdf

PDF Document · 5 pages

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