Heisener Electronics
BOM

NTJD4105CT2G

20V, 8V|630mA, 775mA|270mW
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET N/P-CH 20V/8V SOT-363

Specifications

Brand
ON Semiconductor
Package
6-TSSOP, SC-88, SOT-363
Packaging
—
Weight
—

Total Inventory

3,653pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how NTJD4105CT2G from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerON Semiconductor
Series-
FET TypeN and P-Channel
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)20V, 8V
Current - Continuous Drain (Id) @ 25°C630mA, 775mA
Rds On (Max) @ Id, Vgs375mOhm @ 630mA, 4.5V
Vgs(th) (Max) @ Id1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds46pF @ 20V
Power - Max270mW
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case6-TSSOP, SC-88, SOT-363
Supplier Device PackageSC-88/SC70-6/SOT-363

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Datasheet & Documents

ntjd4105ct4g.pdf

PDF Document · 8 pages

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