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NTHD4N02FT1G

20V|2.9A (Tj)|910mW (Tj)
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MOSFET N-CH 20V 2.9A CHIPFET

Specifications

Brand
ON Semiconductor
Package
ChipFET™
Packaging
—
Weight
—

Total Inventory

342pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how NTHD4N02FT1G from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerON Semiconductor
Series-
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C2.9A (Tj)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Rds On (Max) @ Id, Vgs80mOhm @ 2.9A, 4.5V
Vgs(th) (Max) @ Id1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs4nC @ 4.5V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds300pF @ 10V
FET FeatureSchottky Diode (Isolated)
Power Dissipation (Max)910mW (Tj)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageChipFET™
Package / Case8-SMD, Flat Lead

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Datasheet & Documents

nthd4n02ft1g.pdf

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