Heisener Electronics
BOM

NTHC5513T1G

20V|2.9A, 2.2A|1.1W
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET N/P-CH 20V 1206A

Specifications

Brand
ON Semiconductor
Package
8-SMD, Flat Lead
Packaging
—
Weight
—

Total Inventory

19,032pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how NTHC5513T1G from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerON Semiconductor
Series-
FET TypeN and P-Channel
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C2.9A, 2.2A
Rds On (Max) @ Id, Vgs80mOhm @ 2.9A, 4.5V
Vgs(th) (Max) @ Id1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds180pF @ 10V
Power - Max1.1W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-SMD, Flat Lead
Supplier Device PackageChipFET™

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Datasheet & Documents

nthc5513t1.pdf

PDF Document · 9 pages

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