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NTGS3441PT1G

20V|1.8A (Ta)|510mW (Ta)
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MOSFET P-CH 20V 1.8A 6-TSOP

Specifications

Brand
ON Semiconductor
Package
6-TSOP
Packaging
—
Weight
—

Total Inventory

160pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how NTGS3441PT1G from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerON Semiconductor
Series-
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C1.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Rds On (Max) @ Id, Vgs110mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs6nC @ 4.5V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds345pF @ 15V
FET Feature-
Power Dissipation (Max)510mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package6-TSOP
Package / CaseSOT-23-6

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Datasheet & Documents

ntgs3441pt1g.pdf

PDF Document · 6 pages

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