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30V|2.6A (Ta)|900mW (Ta)
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MOSFET N-CH 30V 2.6A 6-TSOP
Specifications
- Brand
- ON Semiconductor
- Package
- 6-TSOP
- Packaging
- —
- Weight
- —
Total Inventory
198pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how NTGD4169FT1G from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
- Authentic sourcing with full traceability
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Technical Specifications
| Manufacturer | ON Semiconductor | |
| Series | - | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 30V | |
| Current - Continuous Drain (Id) @ 25°C | 2.6A (Ta) | |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V | |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 2.6A, 4.5V | |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 5.5nC @ 4.5V | |
| Vgs (Max) | ±12V | |
| Input Capacitance (Ciss) (Max) @ Vds | 295pF @ 15V | |
| FET Feature | Schottky Diode (Isolated) | |
| Power Dissipation (Max) | 900mW (Ta) | |
| Operating Temperature | -25°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Supplier Device Package | 6-TSOP | |
| Package / Case | SOT-23-6 |
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Datasheet & Documents
ntgd4169ft1g.pdf
PDF Document · 7 pages
