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30V|2.6A, 1.9A|900mW
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MOSFET N/P-CH 30V 6-TSOP
Specifications
- Brand
- ON Semiconductor
- Package
- SOT-23-6 Thin, TSOT-23-6
- Packaging
- —
- Weight
- —
Total Inventory
180,039pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how NTGD4167CT1G from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
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- Rigorous incoming quality inspection
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Technical Specifications
| Manufacturer | ON Semiconductor | |
| Series | - | |
| FET Type | N and P-Channel | |
| FET Feature | Logic Level Gate | |
| Drain to Source Voltage (Vdss) | 30V | |
| Current - Continuous Drain (Id) @ 25°C | 2.6A, 1.9A | |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 2.6A, 4.5V | |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 5.5nC @ 4.5V | |
| Input Capacitance (Ciss) (Max) @ Vds | 295pF @ 15V | |
| Power - Max | 900mW | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 | |
| Supplier Device Package | 6-TSOP |
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Datasheet & Documents
ntgd4167ct1g.pdf
PDF Document · 10 pages
