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20V|3.2A, 2.4A|900mW
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MOSFET N/P-CH 20V 6-TSOP
Specifications
- Brand
- ON Semiconductor
- Package
- SOT-23-6 Thin, TSOT-23-6
- Packaging
- —
- Weight
- —
Total Inventory
344pcs
Ship within 8 hours
MOQ: 1 pcs
Certifications & Authorizations
Product Video
Discover how NTGD3149CT1G from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.
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Technical Specifications
| Manufacturer | ON Semiconductor | |
| Series | - | |
| FET Type | N and P-Channel | |
| FET Feature | Logic Level Gate | |
| Drain to Source Voltage (Vdss) | 20V | |
| Current - Continuous Drain (Id) @ 25°C | 3.2A, 2.4A | |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 3.5A, 4.5V | |
| Vgs(th) (Max) @ Id | 1V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 5.5nC @ 4.5V | |
| Input Capacitance (Ciss) (Max) @ Vds | 387pF @ 10V | |
| Power - Max | 900mW | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 | |
| Supplier Device Package | 6-TSOP |
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Datasheet & Documents
ntgd3149ct1g.pdf
PDF Document · 8 pages
