Heisener Electronics
BOM

NTGD3148NT1G

20V|3A|900mW
OriginalGlobal SourcingFast DeliveryQuality CertifiedTechnical SupportBulk Discount

MOSFET 2N-CH 20V 3A 6TSOP

Specifications

Brand
ON Semiconductor
Package
SOT-23-6 Thin, TSOT-23-6
Packaging
—
Weight
—

Total Inventory

16,680pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how NTGD3148NT1G from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerON Semiconductor
Series-
FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C3A
Rds On (Max) @ Id, Vgs70mOhm @ 3.5A, 4.5V
Vgs(th) (Max) @ Id1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs3.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds300pF @ 10V
Power - Max900mW
Operating Temperature-50°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseSOT-23-6 Thin, TSOT-23-6
Supplier Device Package6-TSOP

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Datasheet & Documents

ntgd3148nt1g.pdf

PDF Document · 5 pages

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