Heisener Electronics
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NTGD3147FT1G

20V|2.2A (Ta)|1W (Ta)
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MOSFET P-CH 20V 2.2A 6-TSOP

Specifications

Brand
ON Semiconductor
Package
6-TSOP
Packaging
—
Weight
—

Total Inventory

315pcs

Ship within 8 hours

MOQ: 1 pcs

Certifications & Authorizations

Product Video

Discover how NTGD3147FT1G from ON Semiconductor fits into your design. Our component experts walk through key specifications, quality certifications, and typical application scenarios.

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Technical Specifications

ManufacturerON Semiconductor
Series-
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C2.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Rds On (Max) @ Id, Vgs145mOhm @ 2.2A, 4.5V
Vgs(th) (Max) @ Id1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs5.5nC @ 4.5V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds400pF @ 10V
FET FeatureSchottky Diode (Isolated)
Power Dissipation (Max)1W (Ta)
Operating Temperature-25°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package6-TSOP
Package / CaseSOT-23-6

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Datasheet & Documents

ntgd3147ft1g.pdf

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